发明名称 |
Method of etching a silicon containing layer using multilayer masks |
摘要 |
A new method is provided for the etch of ultra-small patterns in a silicon based surface. Under the first embodiment, a hardmask layer over a substrate and a layer of ARC over the hardmask layer are successively patterned. The patterned layer of ARC is removed, the remaining patterned hardmask layer is used as a mask for etching the substrate. Under the second embodiment, a first hardmask layer over a substrate, a second hardmask layer over the first hardmask layer and a layer of ARC over the second hardmask layer are successively patterned. The patterned layer of ARC and the second hardmask layer are removed, the remaining first patterned hardmask layer is used as a mask for etching the substrate.
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申请公布号 |
US6777340(B1) |
申请公布日期 |
2004.08.17 |
申请号 |
US20010949505 |
申请日期 |
2001.09.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHIU HSIEN-KUANG;CHEN FANG-CHANG;TAO HUN-JAN;CHIU YUAN-HUNG;CHEN JENG-HORNG |
分类号 |
H01L21/302;H01L21/308;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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