发明名称 |
Deflecting acceleration/deceleration gap |
摘要 |
An accelerating structure and related method for accelerating/decelerating ions of an ion beam are disclosed. The structure and related method are suitable for use in selectively implanting ions into a workpiece or wafer during semiconductor fabrication to selectively dope areas of the wafer. In addition to accelerating and/or decelerating ions, aspects of the present invention serve to focus as well as to deflect ions of an ion beam. This is accomplished by routing the ion beam through electrodes having potentials developed thereacross. The ion beam is also decontaminated as electrically neutral contaminants within the beam are not affected by the potentials and continue on generally traveling along an original path of the ion beam. The electrodes are also arranged in such a fashion so as to minimize the distance the beam has to travel, thereby mitigating the opportunity for beam blow up.
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申请公布号 |
US6777696(B1) |
申请公布日期 |
2004.08.17 |
申请号 |
US20030370952 |
申请日期 |
2003.02.21 |
申请人 |
AXCELIS TECHNOLOGIES, INC. |
发明人 |
RATHMELL ROBERT D.;VANDERBERG BO H.;HUANG YONGZHANG |
分类号 |
H01J;H01J37/147;H01J37/30;H01J37/317;(IPC1-7):H01J37/317 |
主分类号 |
H01J |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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