发明名称 Method for fabricating semiconductor device
摘要 A method for fabricating a semiconductor device includes the steps of: forming an insulating film on a conductive pattern formed on a substrate; forming a resist pattern on the insulating film; performing etching to the insulating film using the resist pattern as a mask to form in the insulating film an opening at which part of the surface of the conductive pattern is exposed; forming an antioxidant layer on the part of surface of the conductive pattern exposed while removing the resist pattern; and depositing a conductive film on the conductive pattern from which the antioxidant layer has been removed.
申请公布号 US6777333(B2) 申请公布日期 2004.08.17
申请号 US20030648482 申请日期 2003.08.27
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 JOEI MASAHIRO
分类号 H01L21/3065;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/44 主分类号 H01L21/3065
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