| 摘要 |
A defect inspection method and a defect inspection apparatus accurately determine whether potential defects on a surface of a wafer are true defects, and restrains the oversight or the like of defects, permitting reliable quality assurance and accurate quality control to be achieved. The number and positions of detected potential defects are used as the parameters for determining whether potential defects are true defects. The density of potential defects is determined, and the determined density is compared with a set value to decide whether the potential defects are true defects. A surface of a wafer is captured using a differential interference microscope, and the image is processed to count the number of potential defects observed on the surface. The potential defects are detected at the spots where luminance shifts in the captured image. A spatial filter is applied to the captured image to enhance the area where the luminance shifts, and the enhanced area is binarized. This allows even adjoining potential defects to be detected without overlapping. Based on the characteristic amounts of the detected areas, it is decided whether the potential defects are true defects or noises, then the number of the true defects is counted.
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