发明名称 |
Ferroelectric memory |
摘要 |
A nonvolatile memory cell in the form of an SRAM is composed of ferroelectric capacitors and transistors for amplification. The memory cell comprises a first capacitor (FC1) connected between a first terminal (ND1) and a common terminal (CP). A second capacitor (FC2) is connected between a second terminal (ND2) and the common terminal. A first transistor (N1) has a current path connected between the first terminal and a reference terminal (GND) and has a control terminal connected to the second terminal. A second transistor (N2) has a current path connected between the second terminal and the reference terminal and has a control terminal connected to the first terminal.
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申请公布号 |
US6778422(B2) |
申请公布日期 |
2004.08.17 |
申请号 |
US20020230574 |
申请日期 |
2002.08.29 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TAKAHASHI HIROSHI;HANDA OSAMU;IKENO RIMON |
分类号 |
G11C11/412;G11C11/22;G11C14/00;H01L21/8244;H01L21/8246;H01L27/105;H01L27/11;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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