Magnetoresistance effect memory device and method for producing the same

摘要

A magneto-resistive effect memory element according to the present invention includes a first ferromagnetic film; a second ferromagnetic film; a first nonmagnetic film provided between the first ferromagnetic film and the second ferromagnetic film, a first conductive film for generating a magnetic field for causing magnetization inversion in at least one of the first ferromagnetic film and the second ferromagnetic film, the first conductive film not being electrically in contact with the first ferromagnetic film or the second ferromagnetic film; and a second conductive film and a third conductive film for supplying an electric current to the first ferromagnetic film, the first nonmagnetic film, and the second ferromagnetic film. The first ferromagnetic film and the second ferromagnetic film have different magnetization inversion characteristics with respect to the magnetic field, and the first nonmagnetic film contains at least a nitride.