发明名称 |
Semiconductor device and complementary semiconductor device |
摘要 |
A semiconductor device includes a channel layer, a gate electrode formed on the channel layer, a p-type source region formed on a first side of the channel layer, and a p-type drain region formed on a second side of the channel layer. A heavy-hole band and a light-hole band are separated by compressive strain applied isotropically in an in-plane direction in the channel layer. A channel direction connecting the p-type source and drain regions is set substantially to a direction to maximize hole mobility in the channel layer.
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申请公布号 |
US6777728(B2) |
申请公布日期 |
2004.08.17 |
申请号 |
US20020329773 |
申请日期 |
2002.12.27 |
申请人 |
FUJITSU LIMITED |
发明人 |
SHIMA MASASHI;UENO TETSUJI;SAKUMA YOSHIKI;NAKAMURA SHUNJI |
分类号 |
H01L29/161;H01L21/338;H01L21/8238;H01L27/092;H01L29/10;H01L29/778;H01L29/78;H01L29/80;H01L29/812;(IPC1-7):H01L29/76;H01L21/336 |
主分类号 |
H01L29/161 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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