Programmable weak write test mode

摘要

A new programmable weak write circuit is defined with the ability to perform SRAM weak write testing at multiple stress strength settings which track process variation. Prior art weak write test circuitry is designed to test a population of SRAM devices at a fixed weak write stress strength as determined by the best available pre-silicon design environmental factors. This design may over- or under-test SRAM cells for the target defects due to poor process tracking characteristics and may require multiple post-silicon design iterations to keep up with environmental changes following initial design. In the new circuit, multiple settings are designed in pre-silicon to account for the expected uncertainty in environmental factors. During post-silicon testing, a suitable stress setting is selected based on an acceptable or predetermined quality versus test yield tradeoff and its suitability is re-evaluated following any significant environmental changes to determine if a different stress setting is necessary.