发明名称 |
Films deposited at glancing incidence for multilevel metallization |
摘要 |
Systems, devices and methods are provided to improve performance of integrated circuits by providing a low-k insulator. One aspect is an integrated circuit insulator structure that includes a vapor-deposited dielectric material. The dielectric material has a predetermined microstructure formed using a glancing angle deposition (GLAD) process. The microstructure includes columnar structures that provide a porous dielectric material. One aspect is a method of forming a low-k insulator structure. In one embodiment, a predetermined vapor flux incidence angle theta is set with respect to a normal vector for a substrate surface so as to promote a dielectric microstructure with individual columnar structures. Vapor deposition and substrate motion are coordinated so as to form columnar structures in a predetermined shape. Other aspects are provided herein.
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申请公布号 |
US6777770(B2) |
申请公布日期 |
2004.08.17 |
申请号 |
US20020105672 |
申请日期 |
2002.03.25 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L21/02;H01L23/522;H01L23/532;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/02 |
代理机构 |
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地址 |
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