发明名称 Method for darkening pixel
摘要 Peripheries of a contact 26 for connecting a polycrystalline silicon layer 20 to a pixel electrode 28 are cut by a laser to form a cut area 50. By this cut area 50, the polycrystalline silicon layer 20 around the contact 26 is also cut. In consequence, a TFT 24 is separated from the pixel electrode 28 and a supplemental capacitor electrode 32 to reliably accomplish darkening.
申请公布号 US6778233(B2) 申请公布日期 2004.08.17
申请号 US20010995135 申请日期 2001.11.27
申请人 SANYO ELECTRIC CO., LTD. 发明人 MATSUURA YOSHIAKI;SEGAWA YASUO;TOKUNAGA MASAHIKO
分类号 G02F1/13;G02F1/1362;G02F1/1368;G09F9/30;H01L21/336;H01L29/786;(IPC1-7):G02F1/13;G02F1/133 主分类号 G02F1/13
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