发明名称 |
Method for darkening pixel |
摘要 |
Peripheries of a contact 26 for connecting a polycrystalline silicon layer 20 to a pixel electrode 28 are cut by a laser to form a cut area 50. By this cut area 50, the polycrystalline silicon layer 20 around the contact 26 is also cut. In consequence, a TFT 24 is separated from the pixel electrode 28 and a supplemental capacitor electrode 32 to reliably accomplish darkening.
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申请公布号 |
US6778233(B2) |
申请公布日期 |
2004.08.17 |
申请号 |
US20010995135 |
申请日期 |
2001.11.27 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
MATSUURA YOSHIAKI;SEGAWA YASUO;TOKUNAGA MASAHIKO |
分类号 |
G02F1/13;G02F1/1362;G02F1/1368;G09F9/30;H01L21/336;H01L29/786;(IPC1-7):G02F1/13;G02F1/133 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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