发明名称 Die singulation using deep silicon etching
摘要 A method for separating dies on a wafer includes etching channels around the dies on a first side of the wafer, mounting the first side of the wafer to a quartz plate with an UV adhesive, and grinding a second side of the wafer until the channels are exposed on the second side of the wafer. At this point, the dies are separated but held together by the UV adhesive on the quartz plate. The method further includes mounting a second side of the wafer to a tack tape, exposing UV radiation through the quartz plate to the UV adhesive. At this point, the UV adhesive looses its adhesion so the dies are held together by the tack tape. The method further includes dismounting the quartz plate from the first side of the wafer and picking up the individual dies from the tack tape.
申请公布号 US6777267(B2) 申请公布日期 2004.08.17
申请号 US20020286729 申请日期 2002.11.01
申请人 AGILENT TECHNOLOGIES, INC. 发明人 RUBY RICHARD C.;GEEFAY FRANK S.;HAN CHEOL HYUN;GAN QING;BARFKNECHT ANDREW T.
分类号 H01L21/50;H01L21/68;H01L21/78;(IPC1-7):H01L21/44;H01L21/48 主分类号 H01L21/50
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