发明名称 |
Semiconductor device and its fabrication method |
摘要 |
The portion of a lower-layer wiring contacting with a metal film in a via hole is a copper silicide layer. Moreover, a laminated structure of a titanium-nitride-silicide layer and a titanium nitride film or the laminated structure of a metal film, titanium-nitride-silicide layer, and titanium nitride film is formed between an insulating film and a wiring copper film embedded in a concave portion formed in the insulating film.
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申请公布号 |
US6777811(B2) |
申请公布日期 |
2004.08.17 |
申请号 |
US20020207821 |
申请日期 |
2002.07.31 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HARADA TAKESHI |
分类号 |
H01L21/285;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/48;H01L23/40;H01L23/52 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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