发明名称 Coupled cavity high power semiconductor laser
摘要 An active gain region sandwiched between a 100% reflective bottom. Bragg mirror and an intermediate partially reflecting Bragg mirror is formed on a lower surface of a supporting substrate, to thereby provide the first ("active") resonator cavity of a high power coupled cavity surface emitting laser device. The bottom mirror is preferably in direct thermal contact with an external heat sink for maximum heat removal effectiveness. The reflectivity of the intermediate mirror is kept low enough so that laser oscillation within the active gain region will not occur. The substrate is entirely outside the first active resonator cavity to a level sufficient to cause lasing. The substrate is entirely outside the active cavity but is contained within a second ("passive") resonator cavity defined by the intermediate mirror and a partially reflecting output mirror, where it is subjected to only a fraction of the light intensity that is circulating in the gain region. The active gain region is preferably electrically excited, with a circular bottom electrode formed by an oxide current aperture between the bottom mirror and the heat sink, and with an annular top electrode formed on an upper surface of the substrate.
申请公布号 US6778582(B1) 申请公布日期 2004.08.17
申请号 US20000519890 申请日期 2000.03.06
申请人 NOVALUX, INC. 发明人 MOORADIAN ARAM
分类号 G02F1/017;G02F1/03;H01S3/107;H01S3/109;H01S5/06;H01S5/065;H01S5/10;H01S5/14;H01S5/183;H01S5/40;H01S5/42;(IPC1-7):H01S3/082;H01S3/08;H01S3/10;H01S5/00 主分类号 G02F1/017
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