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发明名称
半导体装置
摘要
本发明的问题为提供一种半导体装置,所包含的电晶体能够抑制经由闸极绝缘膜而流通于闸极和汲极之间的漏电流之增加。解决问题之手段为在包含p型杂质的p型Si半导体基板1上,形成包含n型杂质的源极区域2和汲极区域3。在该源极区域2和汲极区域3之间的p型Si半导体基板1表面的活性区域上,形成闸极绝缘膜4。在闸极绝缘膜4上,形成包含n型杂质的n型SiGe混晶膜5,并且在n型SiGe混晶膜5上,形成包含p型杂质的p型SiGe混晶膜6。
申请公布号
TW200415789
申请公布日期
2004.08.16
申请号
TW092123421
申请日期
2003.08.26
申请人
瑞萨科技股份有限公司
发明人
相原一洋
分类号
H01L29/78
主分类号
H01L29/78
代理机构
代理人
赖经臣
主权项
地址
日本
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