发明名称 |
STRUCTURE OF DIELECTRIC LAYER, PIEZOELECTRIC ACTUATOR USING STRUCTURE OF DIELECTRIC LAYER, AND INKJET HEAD TO MINIATURIZE AND HIGHLY INTEGRATE ELEMENT LIKE ACTUATOR, MEMORY OR SENSOR |
摘要 |
PURPOSE: A structure of a dielectric layer is provided to miniaturize and highly integrate an element like an actuator, a memory or a sensor by obtaining a good dielectric characteristic, a piezoelectric characteristic, a superconductive characteristic and a ferroelectric characteristic. CONSTITUTION: A structure of a dielectric layer includes a substrate(102) and a dielectric layer(106) formed on the substrate. The dielectric layer has a plane orientation of (001) with respect to the substrate. The value u of the following formula 1 associated with the dielectric layer is a real number larger than 2. £formula 1| u=(Cc/Ca)*(Wa/Wc) Cc is a peak count number of a plane of (001') of the dielectric layer in out-of-plane X-ray diffraction measurement(wherein 1' is a selected natural number so that Cc becomes a maximum). Ca is a peak count number of a plane of (h'00) of the dielectric layer in in-plane X-ray diffraction measurement(wherein h' is a selected natural number so that Cc becomes a maximum). Wc is a width of a half of a peak value of the plane (001') in out-of-plane rocking curve X-ray diffraction measurement. Wa is a width of a half of a peak value of the plane (h'00) in in-plane rocking curve X-ray diffraction measurement. |
申请公布号 |
KR20040072052(A) |
申请公布日期 |
2004.08.16 |
申请号 |
KR20040007794 |
申请日期 |
2004.02.06 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
AOTO HIROSHI;TAKEDA KENICHI;FUKUI TETSURO;IFUKU TOSHIHIRO |
分类号 |
B41J2/045;B41J2/055;B41J2/135;B41J2/14;H01B3/12;H01L29/00;H01L41/08;H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/316 |
主分类号 |
B41J2/045 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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