| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to entirely remove hydrogen components in a trench by annealing under nitrogen atmosphere. CONSTITUTION: A pad oxide layer(22) and a pad nitride layer(23) are sequentially formed on a semiconductor substrate(21). A trench(25) is formed by etching the pad nitride layer, the pad oxide layer and the substrate. The trench is gradually sloped by annealing under hydrogen atmosphere. The remaining hydrogen components are removed by annealing under nitrogen atmosphere. Then, an isolation layer(26) is formed in the trench.
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