| 摘要 |
The present invention relates to a method of manufacturing a flash memory cell. The method includes forming a stack gate in which a floating gate and a control gate are stacked at a given region of a semiconductor substrate, and performing a rapid thermal nitrification process to form a nitride film at the side of the stack gate and over the semiconductor substrate. Therefore, the present invention can improve a retention characteristic and can prevent movement of threshold voltage control ions.
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