| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent an electric filed from being concentrated by forming a dual slope at the upper corner of a trench in forming the trench. CONSTITUTION: A stack structure in which an isolation region is defined is formed on a semiconductor substrate(101), composed of a pad oxide layer and a silicon-containing photoresist pattern. An over-etch process is performed to generate polymer at the edge of the isolation region so that the semiconductor substrate in the center of the isolation region is etched while an etch slope surface is formed at the edge of the isolation region. The trench is formed in the center of the isolation region. The surface of the photoresist pattern is oxidized to form a surface oxide layer. An insulation material layer is formed on the resultant structure to bury the trench. A planarization process is performed until a desired thickness of the photoresist pattern is left. The photoresist pattern and the pad oxide layer are eliminated.
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