发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device array comprising highly densely arranged nano-size semiconductor devices is prepared by a simple method. The array comprises a porous body having cylinder-shaped pores formed by removing cylinder-shaped regions from a structure that includes a matrix member formed so as to contain silicon or germanium and the cylinder-shaped regions containing aluminum and dispersed in the matrix member, semiconductor regions formed in the pores, each having at least a p-n or p-i-n junction, and a pair or electrodes, arranged respectively on the top and at the bottom of the semiconductor regions. The semiconductor regions and the pair of electrodes form a plurality of semiconductor devices on a substrate.
申请公布号 US2004157354(A1) 申请公布日期 2004.08.12
申请号 US20030735062 申请日期 2003.12.11
申请人 KURIYAMA AKIRA;MIYATA HIROKATSU;OTTO ALBRECHT;OGAWA MIKI;OKURA HIROSHI;FUKUTANI KAZUHIKO;DEN TOHRU 发明人 KURIYAMA AKIRA;MIYATA HIROKATSU;OTTO ALBRECHT;OGAWA MIKI;OKURA HIROSHI;FUKUTANI KAZUHIKO;DEN TOHRU
分类号 B82B1/00;G02B6/122;H01L21/203;H01L21/306;H01L21/329;H01L27/146;H01L27/148;H01L27/15;H01L29/06;H01L31/10;H01L33/08;H01L33/30;H01L33/42;(IPC1-7):H01L21/00 主分类号 B82B1/00
代理机构 代理人
主权项
地址