发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device array comprising highly densely arranged nano-size semiconductor devices is prepared by a simple method. The array comprises a porous body having cylinder-shaped pores formed by removing cylinder-shaped regions from a structure that includes a matrix member formed so as to contain silicon or germanium and the cylinder-shaped regions containing aluminum and dispersed in the matrix member, semiconductor regions formed in the pores, each having at least a p-n or p-i-n junction, and a pair or electrodes, arranged respectively on the top and at the bottom of the semiconductor regions. The semiconductor regions and the pair of electrodes form a plurality of semiconductor devices on a substrate.
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申请公布号 |
US2004157354(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20030735062 |
申请日期 |
2003.12.11 |
申请人 |
KURIYAMA AKIRA;MIYATA HIROKATSU;OTTO ALBRECHT;OGAWA MIKI;OKURA HIROSHI;FUKUTANI KAZUHIKO;DEN TOHRU |
发明人 |
KURIYAMA AKIRA;MIYATA HIROKATSU;OTTO ALBRECHT;OGAWA MIKI;OKURA HIROSHI;FUKUTANI KAZUHIKO;DEN TOHRU |
分类号 |
B82B1/00;G02B6/122;H01L21/203;H01L21/306;H01L21/329;H01L27/146;H01L27/148;H01L27/15;H01L29/06;H01L31/10;H01L33/08;H01L33/30;H01L33/42;(IPC1-7):H01L21/00 |
主分类号 |
B82B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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