发明名称 |
Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same |
摘要 |
A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.
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申请公布号 |
US2004155283(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20040774456 |
申请日期 |
2004.02.10 |
申请人 |
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发明人 |
YOO IN-KYEONG;KIM BYONG-MAN |
分类号 |
G11C11/412;G11C16/04;H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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