发明名称 Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
摘要 A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.
申请公布号 US2004155283(A1) 申请公布日期 2004.08.12
申请号 US20040774456 申请日期 2004.02.10
申请人 发明人 YOO IN-KYEONG;KIM BYONG-MAN
分类号 G11C11/412;G11C16/04;H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 主分类号 G11C11/412
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