RESIST COMPOSITION

摘要

A resist composition for use in an immersion lithography process which satisfies a specific parameter; a positive resist composition which comprises a resin component (A) having a dissolution-suppressing group being dissociated by an acid and thus exhibiting enhanced solubility in an alkali by the action of an acid, an acid generating component (B) and an organic solvent (C), wherein the (A) component (a1) has a constituting unit derived from a (meth)acrylate ester having a dissolution-suppressing group being dissociated by an acid and (a0) has no organic constituting unit (a0-1) containing an anhydride of a dicarboxylic acid and no organic constituting unit (a0-2) containing a phenolic hydroxyl group; and a method for forming a resist pattern which comprises using the above resist composition. The resist composition is resistant to a solvent used in an immersion lithography process, and also is excellent in sensitivity and in the form of a resist pattern profile.