METHOD FOR FABRICATING IN-PLANE SINGLE ELECTRON TRANSISTOR OPERATING AT ROOM TEMPERATURE BY FOCUSED ION BEAM PROCESS

摘要

PURPOSE: A method for fabricating In-plane single electron transistor operating at room temperature by a focused ion beam process is provided to avoid a thermal fluctuation phenomenon in fabricating next-generation high integrated circuit and a semiconductor electronic device, solve a problem of intercepting a single electron effect caused by a quantum interference effect occurring at a nano particle. CONSTITUTION: The in-plane single electron transistor is made by two-step fabricating process in which a sample deposition step and a junction formation step are optimized. The density of a nano quantum island formed in an aluminum metal layer(5) by irradiation effect of a focused ion beam is precisely controlled to form a single electron tunnel junction and a capacitive junction simultaneously.