MAIN WORD LINE DRIVER CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE SUPPLIED THERETO NEGATIVE VOLTAGE

摘要

PURPOSE: A main word line driver circuit of a semiconductor memory device supplied thereto a negative voltage is provided not to reduce the shift speed from the low level to the high level of the main word line enabling the main word line although the main word line driver circuit is operated at a low voltage. CONSTITUTION: A main word line driver circuit of a semiconductor memory device supplied thereto a negative voltage includes a power supply(250) and a plurality of output parts(241-24n). The power supply(250) supplies the second voltage being larger than the first voltage after the first voltage is supplied to the node. And, the plurality of output parts(241-24n) receives the first voltage and the second voltage supplied to the nodes and generates each of the main word line signals.