| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which the defect density is reduced, and the defect distribution can be uniformized. <P>SOLUTION: The method for manufacturing the semiconductor device comprises a first step of successive lamination of a first semiconductor layer 33, a mask layer 35, and a metallization layer 39 on a substrate 31, a second step in which the metallization layer 39 is anodized, and changed to a metal oxide layer in which many holes (nano holes) with nano size are formed, a third step in which the mask layer 35 is etched by using the metal oxide layer as mask so that the nano holes may extend to a front surface of the primary semiconductor layer 33, a fourth step in which the metal oxide layer is eliminated, and a fifth step in which a second semiconductor layer is deposited on the upper face of the mask layer and the first semiconductor layer. The defect density generated by a lattice mismatching is reduced, and the defect distribution can be distributed. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
