| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for purifying a single crystal silicon member for heat treating a semiconductor substrate in which a metal pollution can be remarkably reduced as compared with a polycrystal silicon boat and a purifying effect is stabilized. SOLUTION: The method for purifying the single crystal silicon member for heat treating the semiconductor substrate includes a step of cleaning the single crystal silicon member having an oxide film by an HF aqueous solution, and further a step of heat treating the semiconductor substrate in a mixed gas atmosphere of an HCl having an HCl gas concentration of 5 to 50 % and an oxygen. COPYRIGHT: (C)2004,JPO&NCIPI
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