| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for safely and precisely forming a MOS transistor, a nitride film capacitor, and a polysilicon resistor, and also to provide a method for manufacturing the same. SOLUTION: After forming a LOCOS 2 for separating elements on a silicon substrate 1, and forming a MOS element 3, a gate of the MOS element 3, and a first polysilicon resistor 10a by selectively etching, a CVD oxide film 11 to become a gate part sidewall film 14 is formed. After this, a capacitor region 5 is opened, a nitride film 12 to become a capacitor dielectric, and a polysilicon film 13 to become a capacitor upper electrode and the polysilicon resistor is formed. After an impurity is ion implanted to the polysilicon, the polysilicon is heat treated, and a nitride film capacitor 5 and a second polysilicon resistor 10b are formed by the selective etching. After this, the ion implantation at the time of the MOS element forming is conducted to the second polysilicon resistor 10b to form a third polysilicon resistor 10c. COPYRIGHT: (C)2004,JPO&NCIPI
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