| 摘要 |
PROBLEM TO BE SOLVED: To provide a low voltage nonvolatile memory operable even at a low voltage, a nonvolatile memory, and a device thereof, and to provide a nonvolatile memory as a single chip wherein a high density NAND flash memory and a low density NOR flash memory are integrated into a single chip, an independent embedded bit line is provided, bidirectional FN tunnel write / erasure operations can be operated, and a bidirectional FN serial (BiAND) EEPROM (electrical erasable programable ROM) and a 2-transistor FN parallel (2T-BiNOR) EEPROM are integrated as a single chip; and to provide a device thereof. SOLUTION: The low voltage nonvolatile memory is configured to include a substrate, first conduction type cell wells formed on the substrate, a plurality of rows of second conduction type embedded bit lines laid out in parallel with the cell wells, a plurality of memory cell blocks formed in series for every row of a plurality of rows of the second conduction type embedded bit lines, and local bit lines provided on a plurality of the memory cell blocks. COPYRIGHT: (C)2004,JPO&NCIPI
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