发明名称 MANUFACTURING METHOD OF SURGE ABSORBER ELEMENT, AND THE ELEMENT
摘要 PROBLEM TO BE SOLVED: To manufacture a surge absorbing element having high performance and stably operating at low cost. SOLUTION: A metal mask (die) of stainless steel is covered on a ceramic substrate 12 so as to make no gap, and a conductive thin film electrode 11 is formed by vacuum vapor deposition. The thin film electrode 11 is formed so as to have a round shape, and the electrode is suitable for heightening and stabilizing a discharge voltage. The greater the work function of a metallic electrode material is, the higher the discharge voltage is, and the thicker the film thickness of the conductive thin film, the higher the discharge voltage becomes. Therefore, the discharge voltage can be controlled by the work function of the electrode and the film thickness, and a stably operating element can be manufactured at low cost by a vapor deposition method. A spattering method can be used to form the conductive thin film, and in addition to using the metal mask to form an electrode shape, a photoetching method established in a semiconductor process can be used. The ceramic substrate on which the conductive thin film electrode 11 is formed is sealed in a glass tube or the like as in the case of a printing method so that a nearly vacuum condition can be kept in it. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004228026(A) 申请公布日期 2004.08.12
申请号 JP20030017347 申请日期 2003.01.27
申请人 UNIV NIHON 发明人 SHIMIZU HIROBUMI
分类号 H01T4/12;H01T4/10;(IPC1-7):H01T4/12 主分类号 H01T4/12
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