| 摘要 |
The present invention provides a method for fabricating a semiconductor structure having the steps of: providing a semiconductor substrate (10); providing a plurality of trenches (G11, G12; G21) in the semiconductor substrate (10) using a first hard mask (50), which trenches are arranged offset with respect to one another in rows (r1, r2) and columns (s1, s2, s3); causing the hard mask (50) to recede by a predetermined distance (Delta) with respect to the trench wall at the top side (OS) of the semiconductor substrate (10) for the purpose of forming a first hard mask (50') that has been caused to recede; providing an isolation trench structure (ST) in the semiconductor substrate (10) using a second hard mask (HM), the isolation trench structure (ST) subdividing the first first [sic] hard mask (50') that has been caused to recede along the rows (r1, r2) into strip sections (501', 502'; 503') and the strip sections (501'; 503') of adjacent rows (r1, r2) being arranged offset with respect to one another; the receding process resulting in a reduction of an overlap region (KB') between two strip sections (503'; 503') of adjacent rows (r1, r2) in comparison with an overlap region (KB) which would be present without the receding process; removing the second hard mask (HM); and filling and planarizing the isolation trench structure (ST) with a filling material (FI) using the first hard mask (50') subdivided into the strip sections (501', 502'; 503').
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