发明名称 |
Method of forming sub-micron-size structures over a substrate |
摘要 |
A method is provided for forming sub-micron-size structures over a substrate. A width-defining step is formed over the substrate. A width-defining layer is formed over an edge of the width-defining step. The width-defining layer is etched back to leave a spacer adjacent the width-defining step. A length-defining step is formed over the substrate. A length-defining layer is formed over an edge of the length-defining step. The length-defining layer is etched back to leave a spacer adjacent a first edge of the length-defining step and across a first portion of the spacer left by the width-defining layer. The length-defining step is then removed. The spacer left by the width-defining layer is then etched with the spacer left by the length-defining layer serving as a mask, to form the structure.
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申请公布号 |
US2004155011(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20030364281 |
申请日期 |
2003.02.10 |
申请人 |
HARELAND SCOTT A.;DOYLE BRIAN S.;CHAU ROBERT S. |
发明人 |
HARELAND SCOTT A.;DOYLE BRIAN S.;CHAU ROBERT S. |
分类号 |
B44C1/22;B81B1/00;B81C1/00;H01L21/00;H01L29/06;H01L29/12;(IPC1-7):B44C1/22 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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