发明名称 |
Semiconductor device and method and system for fabricating the same |
摘要 |
A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-O3 CVD where an ozone concentration is relatively low. A second TEOS-O3 film having a relatively small water content is formed on the first TEOS-O3 film through second TEOS-O3 CVD where the ozone concentration is relatively high.
|
申请公布号 |
US2004155279(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20040769808 |
申请日期 |
2004.02.03 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KUTSUNAI TOSHIE;HAYASHI SHINICHIRO;JUDAI YUJI;NAGANO YOSHIHISA |
分类号 |
H01L23/522;C23C16/40;H01L21/02;H01L21/316;H01L21/318;H01L21/768;H01L21/822;H01L21/8234;H01L21/8242;H01L21/8246;H01L27/04;H01L27/06;H01L27/105;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L23/522 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|