| 摘要 |
A semiconductor device and its manufacturing method. The semiconductor device has a semi-insulating GaAs substrate 310, a GaAs buffer layer 321 that is formed on the semi-insulating GaAs substrate 310, AlGaAs buffer layer 322, a channel layer 323, a spacer layer 324. a carrier supply layer 325, a spacer layer 326, a Schottky layer 327 that is composed of an undope In0.48Ga0.52P, an n<+>-type GaAs cap layer 328, a gate electrode 330 that is formed on the Schottky layer 327, is composed of LaB6 and has a Schottky contact with the Schottky layer 327 and ohmic electrodes 340 that are formed on the n<+>-type GaAs cap layer 328.
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