发明名称 SEMICONDUCTOR INTEGRATED DEVICE AND FABRICATING METHOD THEREOF TO REDUCE THERMAL STRESS AND PREVENT CHARACTERISTIC OF SEMICONDUCTOR INTEGRATED DEVICE FROM BEING DETERIORATED
摘要 PURPOSE: A semiconductor integrated device is provided to reduce thermal stress and prevent the characteristic of a semiconductor integrated device from being deteriorated by maintaining a predetermined interval between a semiconductor chip and a supporting base member. CONSTITUTION: The semiconductor integrated device includes a semiconductor chip with a semiconductor integrated circuit(24) and a supporting base member stacked on at least a surface of the semiconductor chip. Resin mixed with elementary particles is filled between the semiconductor chip and the supporting base member wherein the interval between the semiconductor chip and the supporting base member is larger than the maximum diameter of the elementary particles.
申请公布号 KR20040071645(A) 申请公布日期 2004.08.12
申请号 KR20040007603 申请日期 2004.02.05
申请人 SANYO ELECTRIC CO., LTD. 发明人 OKIGAWA MITSURU
分类号 H01L23/12;H01L21/56;H01L21/58;H01L23/28;H01L23/31;H01L23/485;H01L23/498;H01L27/146;H01L27/148 主分类号 H01L23/12
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