| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a pass-through plug which allows the formation of a reliable pass-through plug with high productivity. SOLUTION: The semiconductor device is provided with a semiconductor substrate, a plurality of diffusion layer patterns formed on top of the semiconductor substrate, an insulation film formed among the plurality of diffusion layer patterns formed on top of the semiconductor substrate, and a pass-through plug which is not in contact with the plurality of diffusion layer patterns and has its part surrounded by the insulation film and is formed through the insulation film and the semiconductor substrate. Or, the semiconductor device is provided with a semiconductor substrate, a plurality of diffusion layer patterns formed on top of the semiconductor substrate, an insulation film formed among the plurality of diffusion layer patterns formed on top of the semiconductor substrate, and a pass-through plug which is not in contact with the insulation film and has its part surrounded by the diffusion layer patterns and is formed through the diffusion layer patterns and the semiconductor substrate. COPYRIGHT: (C)2004,JPO&NCIPI
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