| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that comprises a semiconductor film having an LDD structure capable of easily providing the configuration with which concentration of electric field near a drain region is further prevented. SOLUTION: The method for manufacturing the semiconductor device includes a process where a semiconductor film 22 crystallized on a substrate 10 is formed in a prescribed pattern, a process where an insulating film 31 is formed on the semiconductor film 22, a process where a mask 39 for selectively implanting impurity ion into the semiconductor film 22 is formed on the insulating film 31, a process for implanting the impurity ion into the semiconductor film 22, and a process for peeling a mask 22. The peeling process with the mask 22 is performed by ashing and done under the condition that contains such component as can etch the insulating film 31. COPYRIGHT: (C)2004,JPO&NCIPI |
