| 摘要 |
A semiconductor device has enhanced drain and gate structures where a high conductivity region 12 is added to enhance current conduction, and further region 23 with opposite polarity is included to improve breakdown voltage. Regions 12 and 23 are disposed in the epitaxial layer portion of the drain. A thicker insulator is also formed in the gate-to-drain region. Furthermore, a gate structure with a trench is formed in a portion of the drain region, having lateral and vertical gate electrode elements and thick gate to drain insulator. Gate capacitance and resistance are improved by the gate and drain structures of this invention.
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