Nitride semiconductor device

摘要

To provide a nitride semiconductor element exhibiting low leakage current and high ESD tolerance, the nitride semiconductor element according to the present invention includes an active layer of nitride semiconductor that is interposed between a p-sided layer and an n-sided layer, which respectively consist of a plurality of nitride semiconductor layers, the p-side layer including a p-type contact layer as a layer for forming p-ohmic electrodes, the p-type contact layer being formed by laminating p-type nitride semiconductor layers and n-type nitride semiconductor layers in an alternate manner.