发明名称 LINE PATTERNED GATE STRUCTURE FOR A FIELD EMISSION DISPLAY
摘要 Electron emitting structures and methods of electron emission are provided. In one implementation, an electron emitting structure comprises a substrate, a cathode electrode, an insulating material and a gate electrode. Linear apertures are formed in the gate electrode and in the insulating material in a portion of the gate electrode crossing over the cathode electrode. And an electron emitting material is deposited on a portion of the cathode electrode within each linear aperture. In another implementation, the cathode electrode includes linear cathode sections formed in a portion of the cathode electrode, and the gate electrode has linear gate sections. A respective linear cathode section is located in between two adjacent linear gate sections. And an electron emitting material is deposited on at least a portion of each linear cathode section. In preferred form, the electron emitting structure is implemented in a field emission display (FED).
申请公布号 WO2004068455(A2) 申请公布日期 2004.08.12
申请号 WO2004US01459 申请日期 2004.01.21
申请人 SONY ELECTRONICS INC.;SONY CORPORATION;WANG, JAMES, QIAN;RUSS, BENJAMIN, EDWARD;BARGER, JACK 发明人 WANG, JAMES, QIAN;RUSS, BENJAMIN, EDWARD;BARGER, JACK
分类号 G09G;H01J1/02;H01J1/62;H01J3/02;H01J9/12;H01J29/48;H01J63/04 主分类号 G09G
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