发明名称 |
LINE PATTERNED GATE STRUCTURE FOR A FIELD EMISSION DISPLAY |
摘要 |
Electron emitting structures and methods of electron emission are provided. In one implementation, an electron emitting structure comprises a substrate, a cathode electrode, an insulating material and a gate electrode. Linear apertures are formed in the gate electrode and in the insulating material in a portion of the gate electrode crossing over the cathode electrode. And an electron emitting material is deposited on a portion of the cathode electrode within each linear aperture. In another implementation, the cathode electrode includes linear cathode sections formed in a portion of the cathode electrode, and the gate electrode has linear gate sections. A respective linear cathode section is located in between two adjacent linear gate sections. And an electron emitting material is deposited on at least a portion of each linear cathode section. In preferred form, the electron emitting structure is implemented in a field emission display (FED). |
申请公布号 |
WO2004068455(A2) |
申请公布日期 |
2004.08.12 |
申请号 |
WO2004US01459 |
申请日期 |
2004.01.21 |
申请人 |
SONY ELECTRONICS INC.;SONY CORPORATION;WANG, JAMES, QIAN;RUSS, BENJAMIN, EDWARD;BARGER, JACK |
发明人 |
WANG, JAMES, QIAN;RUSS, BENJAMIN, EDWARD;BARGER, JACK |
分类号 |
G09G;H01J1/02;H01J1/62;H01J3/02;H01J9/12;H01J29/48;H01J63/04 |
主分类号 |
G09G |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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