<p>There is provided a memory control device which prevents continuous access to the same bank of an SDRAM, thereby improving the processing time. The memory control device (105) controls a memory including a plurality of banks which can be accessed continuously by the bank division mode. The priority of the blocks (804, 805, 806) accessing the SDRAM (808) via the memory control device (105) is controlled in such a manner that memory access requests from these blocks continuously access different banks of the SDRAM (808).</p>
申请公布号
WO2004068349(A1)
申请公布日期
2004.08.12
申请号
WO2004JP00671
申请日期
2004.01.26
申请人
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;AKIZUKI, MAMIKO;AOKI, TORU;UEDA, YASUSHI