Ge-Cr ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME

摘要

A Ge-Cr alloy sputtering target comprising 5 to 50 at% of Cr characterized in that the Ge-Cr alloy sputtering target has a relative density of 95% or higher. There is further provided a process for producing the Ge-Cr alloy sputtering target, characterized in that a Cr powder of 75 mum or less size after flat sieving and a Ge powder of 250 mum or less size after sieving, the Ge powder having a BET specific surface area of 0.4 m<2>/g or less, are uniformly dispersed and mixed together and thereafter sintered. The Ge-Cr alloy sputtering target and process for producing the same would enable not only suppressing the dispersions of film forming speed and composition of a GeCrN layer provided by reactive sputtering as an interlayer between the recording layer and protection layer of phase change optical disc but also increasing product yield.