| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a resin film on a dicing region, in which a crack is not formed in a protective film, in the case of a dicing cut and which has the high efficiency of a design operation, and to provide a manufacturing method for the semiconductor device. <P>SOLUTION: An A1 wiring 2 and an interlayer insulating film 3 are laminated on a semiconductor substrate 1, and these layers are connected by a via hole 4. A bonding pad 5 and the protective film 6 for protecting the pad 5 are formed on the interlayer insulating film 3 as an uppermost layer. A gold wire 7 is connected to the pad 5 by reverse wire bonding. The resin film 13 is formed on the dicing region 12 so that the gold wire 7 and the end of the semiconductor device are not brought into contact. The resin film 13 is not brought into contact with the protective film 6 but is separated and formed. The semiconductor device has dotted patterns of the resin film 13, arranged on the dicing region 12. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
