| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element wherein an overflow barrier is formed at a deep position, and occurrence of color mixture is suppressed and also to provide a manufacturing method thereof. SOLUTION: The solid-state imaging element is provided with: a first conduction type semiconductor substrate; a second conduction type semiconductor region; a first conduction type, second conduction type semiconductor region, or an intrinsic semiconductor region, with low impurity concentration and thickness enough to absorb infrared; a light receiving section for storing electric charges in response to an incident light; and a channel stop region formed between charge coupling elements for transferring the electric charges stored in the light receiving section and the light receiving section, and / or under the charge coupling elements. The channel stop region is formed to the solid-state imaging element through ion implantation at a channeling-prone angle. COPYRIGHT: (C)2004,JPO&NCIPI
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