| 摘要 |
A heterojunction bipolar transistor with self-aligned features having a self-aligned dielectric sidewall spacer disposed between base contact and emitter contact, and self-aligned base mesa aligned relative to self-aligned base contact. The base contact is self-aligned relative to the self-aligned dielectric sidewall spacer providing a predetermined base-to-emitter spacing thereby. The emitter may be an n-type, InP material; the base can be a p-type InGaAs material, possibly carbon-doped. The fabrication method includes forming a emitter electrode on an emitter layer; using the emitter contact as a mask, anisotropically etching the emitter exposing the base layer; forming a self-aligned dielectric sidewall spacer upon the emitter and base; self-alignedly depositing a self-aligned base electrode; using the self-aligned base electrode as a mask, anisotropically etching the base layer to expose the subcollector; and depositing a collector electrode on the subcollector layer.
|
