| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently form a through electrode without degrading the quality of the same. <P>SOLUTION: A semiconductor substrate 1 is spin-etched from a rear side 1", so that the semiconductor substrate 1 is made thinner. An opening part 3 is penetrated to form a through hole 3' on the semiconductor substrate 1. The tip of an embedded electrode 7 is made exposed from the through hole 3 of the semiconductor substrate 1, forming a through-electrode 7'. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
