发明名称 BOOTSTRAP CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To obtain a bootstrap circuit capable of setting the gate potential of a transistor to a supply voltage or lower. <P>SOLUTION: The substrate terminal of an NMOS transistor 11 is connected to the source of the NMOS transistor 11, and a control voltage Vcntl ((bootstrap voltage Vreg)+(threshold voltage VTHn of the NMOS transistor 11)) is applied to the gate of the NMOS transistor 11 while a control circuit 13 is in a hold period, and a ground potential is applied to the gate of the NMOS transistor 11 while the control circuit 13 is in a sampling period. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004228988(A) 申请公布日期 2004.08.12
申请号 JP20030015051 申请日期 2003.01.23
申请人 RENESAS TECHNOLOGY CORP 发明人 TSUNEZAWA MASAKAZU
分类号 H03K17/06 主分类号 H03K17/06
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