| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition suitable when an exposure light source at ≤160 nm wavelength, in particular, F2 excimer laser light (157 nm) is used, and specifically, to provide a positive resist composition which shows sufficient transmitting property when a light source at 157 nm wavelength is used and which is improved in coating property, developing defects, and line edge roughness. <P>SOLUTION: The positive resist composition contains: (A) a fluorine-containing resin having a group which decomposes by the action of an acid to increase the solubility in an alkali developer solution and having a structure in which a fluorine atom is substituted for the main chain of the polymer skeleton; and (B) a compound which generates an acid by irradiation of active rays. This composition contains, as the resin of the component (A), at least two kinds of fluorine-containing resins having specified structures. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
