| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a desired pattern on a base substrate without degrading pattern resolution or varying in pattern size. <P>SOLUTION: This method includes a process of forming a reflection preventing film on the base substrate, a process of forming a photoresist having a prescribed pattern on this reflection preventing film, a first etching process for etching the reflection preventing film with this photoresist as a mask, and a second etching process for etching the base substrate with the reflection preventing film as a mask. Then, as the reflection preventing film, one whose etching rate is higher than that of the photoresist is used in the first etching process, and one whose etching rate is lower than that of the base substrate is used in the second etching process. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
