发明名称 METHOD AND DEVICE FOR THERMALLY TREATING WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method and a device for thermally treating a wafer, with which occurrence of slip is suppressed so as to thermally treat the wafer of a large diameter in thermally treating the wafer, a scratch occurred at a back face of the wafer can be prevented, thermal treatment time can be shortened, the thermal treatment device can be miniaturized and cost and power consumption can be reduced. SOLUTION: In the thermal treatment method for thermally treating the wafer, heated gas is sprayed to the wafer and the wafer is thermally treated. The thermal treatment device of the wafer by the thermal treatment method is also installed. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004228462(A) 申请公布日期 2004.08.12
申请号 JP20030017016 申请日期 2003.01.27
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 KOBAYASHI TAKESHI
分类号 H01L21/22;H01L21/31;H01L21/324;(IPC1-7):H01L21/324 主分类号 H01L21/22
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