| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which allows accurate etching without producing an etch residue. SOLUTION: A polysilicon film 7 having a level difference caused by a gate oxide film is stacked. Then, photo resist 6 is applied over the entire surface. The photo resist is not patterned, but it is ashed until the level difference can be seen. Thereafter, the level difference is etched by RIE to reduce the magnitude of the level difference. Then, the photo resist is patterned, and then etching is performed using HBr having a high selectivity with respect to SiO<SB>2</SB>, resulting in making etching successful without producing an etch residue. COPYRIGHT: (C)2004,JPO&NCIPI
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