| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid-state imaging device where variations of the amount of saturated electric charges for every photodiode are suppressed. SOLUTION: The manufacturing method of the solid-state imaging device comprises a process of preparing a first conductivity type semiconductor substrate, a process of ion-implanting a second conductivity type impurity into the semiconductor substrate with a second peak depth shallower than the first peak depth and with a second dose amount lower than the first dose amount to form a second barrier region, a process of forming a plurality of the first conductivity type regions forming the photodiode by ion-implanting a first conductivity type impurity into an upper region of the second barrier region with a third peek depth and with a third dose amount in each pixel region, and a process of forming an overflow drain terminal for applying bias voltage to the semiconductor substrate. COPYRIGHT: (C)2004,JPO&NCIPI
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